Carbon Films Obtained from a C60 Fullerene Ion Beam

Authors

H. Huck, Comision Nacional de Energia Atomica
E. B. Halac, Universidad Nacional de San Martin
M. Reinoso, Universidad Nacional de San Martin
Analía G. Dall'Asén, Minnesota State University - MankatoFollow

Document Type

Article

Publication Date

2002

Abstract

Carbon films have been produced by accelerating C₆₀⁺ ions on silicon substrates with energies between 100 and 800 eV. The resulting films have been characterized by Raman spectroscopy and electrical resistivity measurements. Different deposition regimes have been distinguished depending on the energy of the incident fullerenes. At low energies intermolecular covalent bonds begin to insinuate, while at higher energies there is a coexistence of polymeric and amorphous islands. The samples have been annealed in order to study their thermal behavior. The tendency with increasing voltage, as observed by Raman spectroscopy, is to reach a similar behavior to that of annealed amorphous carbon.

Department

Physics and Astronomy

Publication Title

Diamond and Related Materials

Recommended Citation

H. Huck, E.B. Halac, M. Reinoso, A.G. Dall’Asén. “Carbon films obtained from a C60 fullerene ion beam”. Diamond and Related Materials, vol. 11, N 3-6, 964-968 (2002).

DOI

10.1016/S0925-9635(01)00592-1

Link to Publisher Version (DOI)

https://doi.org/10.1016/S0925-9635(01)00592-1

Publisher's Copyright and Source

Copyright © 2002 Elsevier Science B.V. Article published by Elsevier in Diamond and Related Materials, volume 11, issue numbers 3-6, March-June 2002, pages 964-968. Available online: https://doi.org/10.1016/S0925-9635(01)00592-1